We have observed
17 EP applications
has served for within the last five+ years.
(We consider all applications which have an EP A1 or A2 publication dated after October 21, 2013).
Please note, that we only count EP applications,
in which the name of the patent attorney is explicitly mentioned as representative.
These EP applications are:
METHOD FOR MANUFACTURING SINGLE-CRYSTAL SILICON
Method for producing a silicon single crystal
DEVICE FOR PRODUCING A MONOCRYSTAL BY CRYSTALLIZING SAID MONOCRYSTAL IN A MELTING AREA
EPITAXIAL WAFER AND A METHOD OF MANUFACTURING THEREOF
METHOD OF SUPPORTING A GROWING SINGLE CRYSTAL DURING CRYSTALLIZATION OF THE SINGLE CRYSTAL ACCORDING TO THE FZ METHOD
METHOD FOR GROWING A SINGLE CRYSTAL BY CRYSTALLISATION OF THE SINGLE CRYSTAL FROM A FLOW ZONE
METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL AND SILICON SINGLE CRYSTAL
A SEMICONDUCTOR WAFER AND A METHOD FOR PRODUCING THE SEMICONDUCTOR WAFER
DISSOLVED NITROGEN CONCENTRATION MONITORING METHOD AND SUBSTRATE CLEANING METHOD
METHOD OF MANUFACTURING ANNEALED WAFER
EPITAXIALLY COATED SEMICONDUCTOR WAFER, AND METHOD FOR PRODUCING AN EPITAXIALLY COATED SEMICONDUCTOR WAFER
SEMICONDUCTOR WAFER COMPRISING A MONOCRYSTALLINE GROUP-IIIA NITRIDE LAYER
METHOD FOR THE PRODUCTION OF A SINGLE CRYSTAL BY ZONE MELTING
METHOD FOR THE THERMAL TREATMENT OF GRANULAR MATERIAL COMPOSED OF SILICON, GRANULAR MATERIAL COMPOSED OF SILICON, AND METHOD FOR PRODUCING A MONOCRYSTAL COMPOSED OF SILICON
METHOD FOR PRODUCING A SEMICONDUCTOR WAFER HAVING AN EPITAXIAL LAYER IN A DEPOSITION CHAMBER, APPARATUS FOR PRODUCING A SEMICONDUCTOR WAFER HAVING AN EPITAXIAL LAYER, AND SEMICONDUCTOR WAFER HAVING AN EPITAXIAL LAYER
SEMICONDUCTOR WAFER MADE OF MONOCRYSTALLINE SILICON, AND METHOD FOR PRODUCING SAME