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Wolfgang Staudacher has worked on the following 18 EPO patent applications which have been published in the last five years:

EP12187556

P-type silicon single crystal and method of manufacturing the same

IPC classification:
C30B 15/00, C30B 29/06
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
The patent has been granted
EP12733161

METHOD FOR MANUFACTURING SINGLE-CRYSTAL SILICON

IPC classification:
C30B 15/10, C30B 15/22, C30B 29/06, C30B 35/00
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
APPLICATION DEEMED TO BE WITHDRAWN
EP12723425

METHOD FOR MANUFACTURING SINGLE-CRYSTAL SILICON

IPC classification:
C03B 19/09, C30B 15/10, C30B 29/06, C30B 35/00
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
NO OPPOSITION FILED WITHIN TIMELIMIT
EP13179560

Method for producing a silicon single crystal

IPC classification:
C30B 13/08, C30B 13/10, C30B 13/20, C30B 29/06
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
NO OPPOSITION FILED WITHIN TIMELIMIT
EP13734717

DEVICE FOR PRODUCING A MONOCRYSTAL BY CRYSTALLIZING SAID MONOCRYSTAL IN A MELTING AREA

IPC classification:
C30B 13/20, C30B 13/30, C30B 35/00
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
PATENT GRANTED
EP13798687

EPITAXIAL WAFER AND A METHOD OF MANUFACTURING THEREOF

IPC classification:
H01L 21/20, H01L 21/223
Applicant:
Intel Corporation
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
EXAMINATION IN PROGRESS
EP15181661

METHOD OF SUPPORTING A GROWING SINGLE CRYSTAL DURING CRYSTALLIZATION OF THE SINGLE CRYSTAL ACCORDING TO THE FZ METHOD

IPC classification:
C30B 13/28, C30B 29/06
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
PATENT GRANTED
EP12174541

Ring-shaped resistance heater for supplying heat to a growing single crystal

IPC classification:
C30B 15/14, C30B 30/04, C30B 35/00, H05B 3/40
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
NO OPPOSITION FILED WITHIN TIMELIMIT
EP15198405

METHOD FOR GROWING A SINGLE CRYSTAL BY CRYSTALLISATION OF THE SINGLE CRYSTAL FROM A FLOW ZONE

IPC classification:
C30B 13/20, C30B 13/26, C30B 13/28, C30B 13/32, C30B 29/06
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
PATENT GRANTED
EP11785630

METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL AND SILICON SINGLE CRYSTAL

IPC classification:
C30B 15/00, C30B 29/06, C30B 33/02
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
NO OPPOSITION FILED WITHIN TIMELIMIT
EP14761869

A SEMICONDUCTOR WAFER AND A METHOD FOR PRODUCING THE SEMICONDUCTOR WAFER

IPC classification:
C30B 15/36, C30B 25/02, C30B 25/18, C30B 29/40, H01L 21/02
Applicant:
IMEC VZW
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
EXAMINATION IN PROGRESS
EP12196076

Method and apparatus for producing a single crystal

IPC classification:
C30B 13/20, C30B 13/30
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
NO OPPOSITION FILED WITHIN TIMELIMIT
EP12196921

Method of manufacturing a silicon single crystal substrate

IPC classification:
C30B 15/04, C30B 15/20, C30B 29/06, C30B 33/02
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
NO OPPOSITION FILED WITHIN TIMELIMIT
EP11805808

DISSOLVED NITROGEN CONCENTRATION MONITORING METHOD AND SUBSTRATE CLEANING METHOD

IPC classification:
B08B 3/12, G01N 33/18, H01L 21/02, H01L 21/67
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
NO OPPOSITION FILED WITHIN TIMELIMIT
EP11796952

METHOD OF MANUFACTURING ANNEALED WAFER

IPC classification:
C30B 15/20, C30B 29/06, H01L 21/02
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
NO OPPOSITION FILED WITHIN TIMELIMIT
EP12196109

Method of manufacturing silicon single crystal

IPC classification:
C30B 15/04, C30B 15/22, C30B 29/06
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
NO OPPOSITION FILED WITHIN TIMELIMIT
EP15787593

EPITAXIALLY COATED SEMICONDUCTOR WAFER, AND METHOD FOR PRODUCING AN EPITAXIALLY COATED SEMICONDUCTOR WAFER

IPC classification:
H01L 21/322
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
Request for examination was made
EP16700743

SEMICONDUCTOR WAFER COMPRISING A MONOCRYSTALLINE GROUP-IIIA NITRIDE LAYER

IPC classification:
H01L 21/20
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
Request for examination was made

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