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We have observed 18 EP applications Wolfgang Staudacher has served for within the last five+ years. (We consider all applications which have an EP A1 or A2 publication dated after April 20, 2013). Please note, that we only count EP applications, in which the name of the patent attorney is explicitly mentioned as representative. These EP applications are:

EP12187556

P-type silicon single crystal and method of manufacturing the same

IPC classification:
C30B 15/00, C30B 29/06
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
The patent has been granted
EP12733161

METHOD FOR MANUFACTURING SINGLE-CRYSTAL SILICON

IPC classification:
C30B 15/10, C30B 15/22, C30B 29/06, C30B 35/00
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
APPLICATION DEEMED TO BE WITHDRAWN
EP12723425

METHOD FOR MANUFACTURING SINGLE-CRYSTAL SILICON

IPC classification:
C03B 19/09, C30B 15/10, C30B 29/06, C30B 35/00
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
NO OPPOSITION FILED WITHIN TIMELIMIT
EP13179560

Method for producing a silicon single crystal

IPC classification:
C30B 13/08, C30B 13/10, C30B 13/20, C30B 29/06
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
NO OPPOSITION FILED WITHIN TIMELIMIT
EP13734717

DEVICE FOR PRODUCING A MONOCRYSTAL BY CRYSTALLIZING SAID MONOCRYSTAL IN A MELTING AREA

IPC classification:
C30B 13/20, C30B 13/30, C30B 35/00
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
PATENT GRANTED
EP13798687

EPITAXIAL WAFER AND A METHOD OF MANUFACTURING THEREOF

IPC classification:
H01L 21/20, H01L 21/223
Applicant:
Intel Corporation
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
EXAMINATION IN PROGRESS
EP15181661

METHOD OF SUPPORTING A GROWING SINGLE CRYSTAL DURING CRYSTALLIZATION OF THE SINGLE CRYSTAL ACCORDING TO THE FZ METHOD

IPC classification:
C30B 13/28, C30B 29/06
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
PATENT GRANTED
EP15198405

METHOD FOR GROWING A SINGLE CRYSTAL BY CRYSTALLISATION OF THE SINGLE CRYSTAL FROM A FLOW ZONE

IPC classification:
C30B 13/20, C30B 13/26, C30B 13/28, C30B 13/32, C30B 29/06
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
PATENT GRANTED
EP11785630

METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL AND SILICON SINGLE CRYSTAL

IPC classification:
C30B 15/00, C30B 29/06, C30B 33/02
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
NO OPPOSITION FILED WITHIN TIMELIMIT
EP14761869

A SEMICONDUCTOR WAFER AND A METHOD FOR PRODUCING THE SEMICONDUCTOR WAFER

IPC classification:
C30B 15/36, C30B 25/02, C30B 25/18, C30B 29/40, H01L 21/02
Applicant:
IMEC VZW
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
EXAMINATION IN PROGRESS
EP12196076

Method and apparatus for producing a single crystal

IPC classification:
C30B 13/20, C30B 13/30
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
NO OPPOSITION FILED WITHIN TIMELIMIT
EP12196921

Method of manufacturing a silicon single crystal substrate

IPC classification:
C30B 15/04, C30B 15/20, C30B 29/06, C30B 33/02
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
NO OPPOSITION FILED WITHIN TIMELIMIT
EP11805808

DISSOLVED NITROGEN CONCENTRATION MONITORING METHOD AND SUBSTRATE CLEANING METHOD

IPC classification:
B08B 3/12, G01N 33/18, H01L 21/02, H01L 21/67
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
NO OPPOSITION FILED WITHIN TIMELIMIT
EP11796952

METHOD OF MANUFACTURING ANNEALED WAFER

IPC classification:
C30B 15/20, C30B 29/06, H01L 21/02
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
NO OPPOSITION FILED WITHIN TIMELIMIT
EP12196109

Method of manufacturing silicon single crystal

IPC classification:
C30B 15/04, C30B 15/22, C30B 29/06
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
NO OPPOSITION FILED WITHIN TIMELIMIT
EP15787593

EPITAXIALLY COATED SEMICONDUCTOR WAFER, AND METHOD FOR PRODUCING AN EPITAXIALLY COATED SEMICONDUCTOR WAFER

IPC classification:
H01L 21/322
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
Request for examination was made
EP16700743

SEMICONDUCTOR WAFER COMPRISING A MONOCRYSTALLINE GROUP-IIIA NITRIDE LAYER

IPC classification:
H01L 21/20
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
Request for examination was made
EP17182948

METHOD FOR THE PRODUCTION OF A SINGLE CRYSTAL BY ZONE MELTING

IPC classification:
C30B 13/28, C30B 13/30
Applicant:
Siltronic AG
Agent:
Wolfgang Staudacher, Siltronic AG
Status:
Request for examination was made

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