THREE PORT SRAM BIT CELLS WITH FIRST AND SECOND READ WORDLINE AND WRITE WORDLINE ON DIFFERENT METAL LAYERS AND ASSOCIATED LANDING PADS SPLIT ACROSS BOUNDARY EDGES OF EACH SRAM BIT CELL
- Application ID: EP15797787
- Status: █ The patent has been granted
This EP application has the IPC combination G11 (INFORMATION STORAGE) and H01 (BASIC ELECTRIC ELEMENTS). We found, that Becker Kurig Straus, Betten & Resch Patent- und Rechtsanwälte PartGmbB, Cabinet Michel de Beaumont SAS, Cabinet Thierry Schuffenecker, Cabinet Camus Lebkiri and 3 others are specialized in this combination either. For a similar patent, they might be a good choice.