METHOD FOR MANUFACTURING SiC SINGLE CRYSTAL
- Application ID: EP14782347
- Status: █ EXAMINATION REQUESTED
This EP application has the IPC combination C30 (CRYSTAL GROWTH) and H01 (BASIC ELECTRIC ELEMENTS). We found, that Berendt Leyh & Hering, METIDA Law Firm of Reda Zaboliene, AOMB Polska Sp. z o.o., Novaimo, Innovincia and 1 other are specialized in this combination either. For a similar patent, they might be a good choice.