Priority Date: 09.04.13 (JP 20130081376)

METHOD FOR MANUFACTURING SiC SINGLE CRYSTAL

  • Application ID: EP14782347
  • Status: EXAMINATION REQUESTED

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Specialization

This EP application has the IPC combination C30 (CRYSTAL GROWTH) and H01 (BASIC ELECTRIC ELEMENTS). We found, that Berendt Leyh & Hering, METIDA Law Firm of Reda Zaboliene, AOMB Polska Sp. z o.o., Novaimo, Innovincia and 1 other are specialized in this combination either. For a similar patent, they might be a good choice.

Timeline

  • 09.04.2013 - Priority Date (JP 20130081376)
  • 16.10.2014 - Publication A1 (WO2014167844)
  • 17.02.2016 - Publication A1 (EP2985369)

IPC Classification