Priority Date: 26.07.12 (CN 20121260811)

METHOD FOR FORMING MOS DEVICE PASSIVATION LAYER AND MOS DEVICE

  • Application ID: EP13822224
  • Status: GRANT OF PATENT INTENDED

Attorney

Employment test 51 - 200 employees
Company dna michalski huttermann and partner
no operation time available
Headquarter in Düsseldorf and 1 office
active in Legal Services, IP Consulting, and IP Portfolio Processing

Specialization

This patent has the IPC class H01 (BASIC ELECTRIC ELEMENTS) Michalski Hüttermann & Partner is specialized in H01. Here you find a list of all patent agent firms which are specialized in this IPC class. For a similar patent, they might be a good choice.

Timeline

  • 26.07.2012 - Priority Date (CN 20121260811)
  • 30.01.2014 - Publication A1 (WO2014015820)
  • 03.06.2015 - Publication A1 (EP2879172)