Priority Date: 19.07.12 (JP 20120160188)

APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SiC SINGLE CRYSTAL

  • Application ID: EP13819242
  • Status: GRANT OF PATENT INTENDED

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Specialization

This patent has the IPC class C30 (CRYSTAL GROWTH) is specialized in C30. Here you find a list of all patent agent firms which are specialized in this IPC class. For a similar patent, they might be a good choice.

Timeline

  • 19.07.2012 - Priority Date (JP 20120160188)
  • 23.01.2014 - Publication A1 (WO2014013698)
  • 27.05.2015 - Publication A1 (EP2876189)

IPC Classification