Priority Date: 28.08.12 (US 201261693916P)

SILICON-CONTAINING DOPANT COMPOSITIONS, SYSTEMS AND METHODS OF USE THEREOF FOR IMPROVING ION BEAM CURRENT AND PERFORMANCE DURING SILICON ION IMPLANTATION

  • Application ID: EP13762931
  • Status: GRANT OF PATENT INTENDED

Applicant

Technology company logo small
Technology Company

Attorney

Employment test 1 - 10 employees
Company dna schwan schwan schorer
no operation time available
Headquarter in M√ľnchen
active in Legal Services, IP Consulting, and IP Portfolio Processing

Specialization

This EP application has the IPC class H01 (BASIC ELECTRIC ELEMENTS). Here you find a list of all patent agent firms which are specialized in this IPC class. For a similar patent, they might be a good choice.

Timeline

  • 28.08.2012 - Priority Date (US 201261693916P)
  • 06.03.2014 - Publication A1 (WO2014036064)
  • 08.07.2015 - Publication A1 (EP2891172)

IPC Classification