Priority Date: 25.05.12 (FR 20120054875)

METHOD FOR FORMING AN EPITACTIC SILICON LAYER

  • Application ID: EP13731962
  • Status: NO OPPOSITION FILED WITHIN TIMELIMIT

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Specialization

This patent has the IPC class C30 (CRYSTAL GROWTH) is specialized in C30. Here you find a list of all patent agent firms which are specialized in this IPC class. For a similar patent, they might be a good choice.

Timeline

  • 25.05.2012 - Priority Date (FR 20120054875)
  • 28.11.2013 - Publication A1 (WO2013175411)
  • 08.04.2015 - Publication A1 (EP2855743)
  • 18.05.2016 - Publication B1 (EP2855743)