Priority Date: 24.08.12 (US 201261693122P)

A BISMUTH-DOPED SEMI-INSULATING GROUP III NITRIDE WAFER AND ITS PRODUCTION METHOD

  • Application ID: EP13711762
  • Status: GRANT OF PATENT INTENDED

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Timeline

  • 24.08.2012 - Priority Date (US 201261693122P)
  • 27.02.2014 - Publication A1 (WO2014031152)
  • 01.07.2015 - Publication A1 (EP2888390)