Priority Date: 14.01.13 (KR 20130004038)

Trench MOS gate semiconductor device and method of fabricating the same

  • Application ID: EP13192575
  • Status: GRANT OF PATENT INTENDED

Applicant

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Technology Company

Attorneys

operating since 1927
Headquarter in London and 3 offices
active in Legal Services and IP Consulting
operating since 1927
Headquarter in London and 3 offices
active in Legal Services and IP Consulting

Specialization

This EP application has the IPC class H01 (BASIC ELECTRIC ELEMENTS). Elkington and Fife LLP is specialized in H01. Elkington and Fife LLP, Elkington and Fife LLP is specialised in H01 (BASIC ELECTRIC ELEMENTS). Here you find a list of all patent agent firms which are specialized in this IPC class. For a similar patent, they might be a good choice.

Timeline

  • 14.01.2013 - Priority Date (KR 20130004038)
  • 16.07.2014 - Publication A2 (EP2755237)
  • 18.05.2016 - Publication A3 (EP2755237)