Priority Date: 14.01.13 (KR 20130004038)

Trench MOS gate semiconductor device and method of fabricating the same

  • Application ID: EP13192575
  • Status: GRANT OF PATENT INTENDED

Applicant

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Technology Company

Attorneys

operating since 1927
Headquarter in London and 2 offices
active in Legal Services and IP Consulting
operating since 1927
Headquarter in London and 2 offices
active in Legal Services and IP Consulting

Specialization

This patent has the IPC class H01 (BASIC ELECTRIC ELEMENTS) Elkington and Fife LLP is specialized in H01. Here you find a list of all patent agent firms which are specialized in this IPC class. For a similar patent, they might be a good choice.

Timeline

  • 14.01.2013 - Priority Date (KR 20130004038)
  • 16.07.2014 - Publication A2 (EP2755237)
  • 18.05.2016 - Publication A3 (EP2755237)