Priority Date: 29.08.11 (JP 20110186362)

SILICON CARBIDE SINGLE CRYSTAL WAFER AND MANUFACTURING METHOD FOR SAME

  • Application ID: EP12828338
  • Status: EXAMINATION IN PROGRESS

Attorney

Employment test 51 - 200 employees
Company dna vossius and partner
operating since 1961
Headquarter in Munich and 3 offices
active in Legal Services and IP-related Communication Service

Specialization

This patent has the IPC class C30 (CRYSTAL GROWTH) is specialized in C30. Here you find a list of all patent agent firms which are specialized in this IPC class. For a similar patent, they might be a good choice.

Timeline

  • 29.08.2011 - Priority Date (JP 20110186362)
  • 07.03.2013 - Publication A1 (WO2013031856)
  • 09.07.2014 - Publication A1 (EP2752508)

IPC Classification