ETCHED SILICON STRUCTURES, METHOD OF FORMING ETCHED SILICON STRUCTURES AND USES THEREOF
- Application ID: EP12772390
- Status: █ PATENT GRANTED
This EP application has the IPC combination B44 (DECORATIVE ARTS) and H01 (BASIC ELECTRIC ELEMENTS). We found, that Gramm, Lins & Partner Patent- und Rechtsanwälte PartGmbB, Michalski Hüttermann & Partner are specialized in this combination either. For a similar patent, they might be a good choice.