ETCHED SILICON STRUCTURES, METHOD OF FORMING ETCHED SILICON STRUCTURES AND USES THEREOF
- Application ID: EP12772390
- Status: █ PATENT GRANTED
This patent has the IPC combination B44 (DECORATIVE ARTS) and H01 (BASIC ELECTRIC ELEMENTS) is specialized in the combination B44 and H01. We found, that Kaufmann Patent- und Rechtsanwälte, Gramm, Lins & Partner Patent- und Rechtsanwälte PartGmbB are specialized in all of these IPC classes. For a similar patent, they might be a good choice.