Priority Date: 22.08.11 (EP 20110178305)

A METHOD FOR GROWING III-V MATERIALS ON A NON III-V MATERIAL SUBSTRATE COMPRISING STEPS IMPROVING DISLOCATION FAULT DENSITY OF A FINISHED MATERIAL STRUCTURE SUITABLE FOR USE IN SEMICONDUCTOR MANUFACTURING AND SEMICONDUCTOR APPLICATIONS

  • Application ID: EP12748503
  • Status: GRANT OF PATENT INTENDED

Attorneys

operating since 1947
Headquarter in Oslo
active in Legal Services and Matchmaking and Trading
Employment test 51 - 200 employees
Company dna plougmann and vingtoft
operating since 1967
Headquarter in Copenhagen and 5 offices
active in Legal Services, IP Consulting, IP Portfolio Processing, and IP-related Communication Service

Specialization

This patent has the IPC class H01 (BASIC ELECTRIC ELEMENTS) is specialized in H01. Here you find a list of all patent agent firms which are specialized in this IPC class. For a similar patent, they might be a good choice.

Timeline

  • 22.08.2011 - Priority Date (EP 20110178305)
  • 28.02.2013 - Publication A1 (WO2013026858)
  • 02.07.2014 - Publication A1 (EP2748838)

IPC Classification