HEAT TREATMENT METHOD FOR WAFER, METHOD FOR PRODUCING SILICON WAFER, SILICON WAFER, AND HEAT TREATMENT APPARATUS
- Application ID: EP11817884
- Status: █ APPLICATION DEEMED TO BE WITHDRAWN
This EP application has the IPC combination C30 (CRYSTAL GROWTH) and H01 (BASIC ELECTRIC ELEMENTS). We found, that METIDA Law Firm of Reda Zaboliene, AOMB Polska Sp. z o.o., LifeTech IP, Spies Danner & Partner, Patentanwälte PartG mbB, Element Six Ltd, Siltronic AG are specialized in this combination either. For a similar patent, they might be a good choice.