Priority Date: 18.08.10 (JP 20100183020)

HEAT TREATMENT METHOD FOR WAFER, METHOD FOR PRODUCING SILICON WAFER, SILICON WAFER, AND HEAT TREATMENT APPARATUS

  • Application ID: EP11817884
  • Status: APPLICATION DEEMED TO BE WITHDRAWN

Applicant

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Technology Company

Attorney

operating since 1927
Headquarter in Munich
active in Legal Services

Specialization

This EP application has the IPC combination C30 (CRYSTAL GROWTH) and H01 (BASIC ELECTRIC ELEMENTS). We found, that METIDA Law Firm of Reda Zaboliene, AOMB Polska Sp. z o.o., LifeTech IP, Spies Danner & Partner, Patentanwälte PartG mbB, Element Six Ltd, Siltronic AG are specialized in this combination either. For a similar patent, they might be a good choice.

Timeline

  • 18.08.2010 - Priority Date (JP 20100183020)
  • 23.02.2012 - Publication A1 (WO2012023233)
  • 26.06.2013 - Publication A1 (EP2608248)