Priority Date: 07.04.10 (JP 20100088911)

PROCESS FOR PRODUCING EPITAXIAL SINGLE-CRYSTAL SILICON CARBIDE SUBSTRATE AND EPITAXIAL SINGLE-CRYSTAL SILICON CARBIDE SUBSTRATE OBTAINED BY THE PROCESS

  • Application ID: EP11766043
  • Status: EXAMINATION IN PROGRESS

Attorney

Employment test 51 - 200 employees
Company dna vossius and partner
operating since 1961
Headquarter in Munich and 3 offices
active in Legal Services and IP-related Communication Service

Specialization

This EP application has the IPC combination C23, C30, and H01. We found, that Element Six Ltd is specialized in this combination either. For a similar patent, they might be a good choice.

Timeline

  • 07.04.2010 - Priority Date (JP 20100088911)
  • 13.10.2011 - Publication A1 (WO2011126145)
  • 13.02.2013 - Publication A1 (EP2557205)