GaN single crystal substrate and method of making the same using homoepitaxy
- Application ID: EP10001771
- Status: █ No opposition filed within time limit
This EP application has the IPC class C30 (CRYSTAL GROWTH) and H01 (BASIC ELECTRIC ELEMENTS). We found, that METIDA Law Firm of Reda Zaboliene, AOMB Polska Sp. z o.o., LifeTech IP, Spies Danner & Partner, Patentanwälte PartG mbB, Siltronic AG are specialized in this combination either. For a similar patent, they might be a good choice.