Priority Date: 30.10.97 (JP 19970298300)

GaN single crystal substrate and method of making the same using homoepitaxy

  • Application ID: EP10001771
  • Status: No opposition filed within time limit



Employment test 201 - 500 employees
Company dna grunecker kinkeldey stockmair and schwanhausser
operating since 1924
Headquarter in Munich and 2 offices
active in Legal Services


This EP application has the IPC combination C30 (CRYSTAL GROWTH) and H01 (BASIC ELECTRIC ELEMENTS). We found, that METIDA Law Firm of Reda Zaboliene, AOMB Polska Sp. z o.o., LifeTech IP, Spies Danner & Partner, Patentanwälte PartG mbB, Element Six Ltd, Siltronic AG are specialized in this combination either. For a similar patent, they might be a good choice.


  • 30.10.1997 - Priority Date (JP 19970298300)
  • 23.06.2010 - Publication A1 (EP2200071)
  • 18.01.2012 - Publication B1 (EP2200071)