GROUP III ELEMENT NITRIDE SUBSTRATE, SUBSTRATE WITH EPITAXIAL LAYER, PROCESSES FOR PRODUCING THESE, AND PROCESS FOR PRODUCING SEMICONDUCTOR ELEMENT
- Application ID: EP07829399
- Status: █ Examination is in progress
This EP application has the IPC combination C30 (CRYSTAL GROWTH) and H01 (BASIC ELECTRIC ELEMENTS). We found, that METIDA Law Firm of Reda Zaboliene, AOMB Polska Sp. z o.o., LifeTech IP, Spies Danner & Partner, Patentanwälte PartG mbB, Element Six Ltd, Siltronic AG are specialized in this combination either. For a similar patent, they might be a good choice.